Samsung to sample its 2GB DDR3 with power savings of over 40% »

1/Oct
2008

Samsung Electronics announced that it is sampling the industry’s smallest 2GB DDR3 devices. By using 50 nanometer(nm) class circuit technology, productivity of the new devices is 60 percent higher than DDR2 devices of an equivalent density. The new 2GB DDR3-based modules, which enable use of up to 16GB RIMMs (registered in-line memory modules), will save [...]

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